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US6M1
Transistors
N-ch
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
10
Unit
μ A
Conditions
V GS = 20V, V DS = 0V
Drain-source breakdown voltage V (BR) DSS
30
?
?
V
I D = 1mA, V GS = 0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
?
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r ?
t d (off) ?
t f ?
?
1.0
?
?
?
1.0
?
?
?
?
?
?
?
?
?
170
250
270
?
70
15
12
6
6
13
8
1
2.5
240
350
380
?
?
?
?
?
?
?
?
μ A
V
m ?
S
pF
pF
pF
ns
ns
ns
ns
V DS = 30V, V GS = 0V
V DS = 10V, I D = 1mA
I D = 1.4A, V GS = 10V
I D = 1.4A, V GS = 4.5V
I D = 1.4A, V GS = 4V
I D = 1.4A, V DS = 10V
V DS = 10V
V GS = 0V
f = 1MHz
I D = 0.7A, V DD 15V
V GS = 10V
R L = 21 ?
R G = 10 ?
Total gate charge
Q g ?
?
1.4
2.0
nC
V DD 15V
R L = 11 ?
Gate-source charge
Gate-drain charge
Q gs ?
Q gd ?
?
?
0.6
0.3
?
?
nC
nC
V GS = 5V R G = 10 ?
I D = 1.4A
? Pulsed
Body diode characteristics (Source-Drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD
Min.
?
Typ.
?
Max.
1.2
Unit
V
Test Conditions
I S = 0.6A, V GS = 0V
Rev.B
2/7
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